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US 2009/0211604 A1Published application
System and Method For Removing Edge-Bead Material
AssigneeTokyo Electron Limited
InventorsThomas Winter, James Klekotka
Life of this patent
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Abstract
Embodiments of the invention provide edge-bead removal systems and methods for removing edge-bead material from one or more surfaces of semiconductor wafers. Embodiments of the invention may be applied to process wafers at different points in a manufacturing cycle, and the wafers can include one or more metal layers.
Claims20
A method of processing a wafer using a edge-bead removal system, the method comprising:
- determining a first wafer position, wherein the wafer is rotated on a wafer holder in a processing chamber at a first speed during a first time, the wafer having a edge-bead material on one or more outer surfaces;
- positioning a temperature control subsystem proximate a wafer edge, the temperature control subsystem establishing a first wafer edge temperature during the first time, wherein the temperature control subsystem is moved to a first thermal control position proximate the wafer edge, the first thermal control position being determined using the first wafer position;
- positioning a edge-bead removal subsystem proximate a wafer surface, wherein the edge-bead removal subsystem is configured to provide a first set of fluids and/or gasses to a first cleaning space proximate the wafer edge using a first set of flow ports, and is configured to remove a second set of fluids and/or gasses from the first cleaning space using a second set of flow ports;
- performing a edge-bead removal procedure using the edge-bead removal subsystem, wherein the edge-bead material is removed from the wafer;
- determining a first processing state for the wafer, the first processing state being a first value when substantially all of the edge-bead material is removed and being a second value when the edge-bead material is partially removed;
- removing the wafer from the processing chamber, if the first processing state is the first value;
- and
- performing a corrective action, if the first processing state is the second value.
5 more elements
A edge-bead removal system comprising:
- a wafer holder in a processing chamber configured for rotating a wafer at a first speed during a first time, the wafer having a edge-bead material on one or more outer surfaces
- one or more sensors configured for determining a first wafer position while the wafer is rotated on the wafer holder in the processing chamber at the first speed during the first time;
- a temperature control subsystem configured for establishing a first wafer edge temperature during the first time, wherein the temperature control subsystem has a plurality of first coupling elements configured to move the temperature control subsystem to a first thermal control position proximate a wafer edge, the first thermal control position being determined using the first wafer position;
- a edge-bead removal subsystem comprising a first set of flow ports configured to provide a first set of fluids and/or gasses to a first cleaning space proximate the wafer edge, and comprising a second set of flow ports configured to remove a second set of fluids and/or gasses from the first cleaning space, the edge-bead removal subsystem further comprising a plurality of second coupling elements configured to position the edge-bead removal subsystem proximate a wafer surface;
- and
- a controller configured to perform a edge-bead removal procedure using the edge-bead removal subsystem, wherein the edge-bead material is removed from the wafer, configured for determining a first processing state for the wafer, the first processing state being a first value when substantially all of the edge-bead material is removed and being a second value when the edge-bead material is partially removed, configured to remove the wafer from the processing chamber, if the first processing state is the first value;
- and configured to perform a corrective action, if the first processing state is the second value.
4 more elements
A system for processing a wafer having edge-bead material on an outer surface, comprising:
- a processing chamber having a wafer transfer port for transferring the wafer into and out of a process space;
- a wafer table for positioning the wafer in the processing chamber when the wafer is processed;
- a translation unit coupled to the processing chamber and the wafer table, the translation unit being configured to rotate the wafer table;
- a temperature control subsystem coupled to the processing chamber, the temperature control subsystem being configured for establishing a first wafer edge temperature during a first time, wherein the temperature control subsystem has a plurality of first coupling elements configured to move the temperature control subsystem to a first thermal control position proximate a wafer edge, the first thermal control position being determined using a first wafer position;
- a edge-bead removal subsystem coupled to the processing chamber, the edge-bead removal subsystem comprising a first set of flow ports configured to provide a first set of fluids and/or gasses to a first cleaning space proximate the wafer edge, and comprising a second set of flow ports configured to remove a second set of fluids and/or gasses from the first cleaning space, the edge-bead removal subsystem further comprising a plurality of second coupling elements configured to position the edge-bead removal subsystem proximate a wafer surface;
- a supply subsystem coupled to the processing chamber, the supply subsystem being configured to provide processing fluids and/or gasses at correct temperatures and flow rates to the edge-bead removal subsystem;
- and
- a controller configured to perform a edge-bead removal procedure using the edge-bead removal subsystem, wherein the edge-bead material is removed from the wafer, configured for determining a first processing state for the wafer, the first processing state being a first value when substantially all of the edge-bead material is removed and being a second value when the edge-bead material is partially removed, configured to remove the wafer from the processing chamber, if the first processing state is the first value;
- and configured to perform a corrective action, if the first processing state is the second value.
6 more elements
Dependencies are inferred from the claim text.