US 2009/0211596 A1 · Method of post etch polymer residue removal

Abstract

A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

Claims20

Dependent claims

A method for removing a post-etch polymer residue from a surface of a substrate, comprising:

identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate, the dry flash chemistry configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer, the dry flash chemistry comprised of dry cleaning chemical;
applying the identified dry flash chemistry using a short flash process, the short flash application of the dry flash chemistry enabling removal of at least a portion of the post-etch polymer residue;
and
applying a wet cleaning chemistry to the surface of the substrate, the application of the wet cleaning chemistry aiding in substantial removal of the post-etch polymer residue left behind by the short flash process.

1 more element

A system for removing a post-etch polymer residue from a surface of a substrate, comprising:

a substrate supporting device to receive and support the substrate in an ambient controlled chamber, the substrate supporting device configured to receive and move the substrate along a plane within the ambient controlled chamber;
and
a flash chemistry applicator disposed in the ambient controlled chamber to introduce a dry flash chemistry to the surface of the substrate using a short flash process, the flash chemistry applicator having controls to control the flow of the dry flash chemistry, the short application of dry flash chemistry enabling substantial removal of the polymer residue left behind by an etch operation in an area in which a feature is formed on the surface of the substrate,
wherein the dry flash chemistry is selected based on characteristic aspects of the polymer residue left behind by an etching operation, the characteristic aspects of the dry flash chemistry defined by a plurality of parameters.

1 more element

Dependencies are inferred from the claim text.

Method of post etch polymer residue removal

Life of this patent

Method of post etch polymer residue removal

Life of this patent

Abstract

Claims20