Emitter-switched bipolar transistor
AssigneeConergy AG
InventorHans Oppermann
Life of this patent
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Abstract
The invention relates to a power circuit with a emitter-switched bipolar transistor (ESBT) (T2) and a MOS transistor (T3) connected downstream of the bipolar transistor. The bipolar transistor (T2) is controlled by a Mosfet transistor (T1). A zener diode (D1) which is disposed between the exit of the MOS transistor (T3) and the base of the bipolar transistor (T2) transmits the return current of the base collector diode of the bipolar transistor (T2) to the foot point of the ESBT (T2). Furthermore, a voltage source (U) is inserted between the collector of the bipolar transistor (T2) and the drain of the Mosfet transistor (T1).
Claims6
A power circuit comprising:
- an emitter-controlled bipolar transistor with a MOS transistor connected downstream thereof;
- a MOSFET transistor driving the bipolar transistor;
- a limiter diode lying between an output of the MOS transistor and a base of the bipolar transistor, which diode forwards the reverse current of a base-collector diode of the bipolar transistor to a reference point of the ESBT;
- and
- a voltage source between a collector of the bipolar transistor and a drain of the MOSFET transistor.
A power circuit comprising:
- an emitter-controlled bipolar transistor with a MOS transistor connected upstream thereof;
- a MOSFET transistor driving the bipolar transistor;
- a limiter diode lying between an input of the MOS transistor and a base of the bipolar transistor, which diode forwards the reverse current of a base-collector diode of the bipolar transistor to a reference point of the ESBT;
- and
- a voltage source between an emitter of the bipolar transistor and a drain of the MOSFET transistor.
Dependencies are inferred from the claim text.