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US 2009/0179161 A1Published application
Ion sources, systems and methods
AssigneeALIS Corporation
InventorsBILLY W. WARD, JOHN A. NOTTE, IV, LOUIS S. FARKAS, III, RANDAL G. PERCIVAL, RAYMOND HILL, KLAUS EDINGER, LARS MARKWORT, DIRK ADERHOLD, ULRICH MANTZ
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Abstract
Ion sources, systems and methods are disclosed.
Claims1
A method, comprising:
- generating an ion beam by interacting a gas with a gas field ion source;
- using the ion beam to determine information about a semiconductor article, the ion beam having a spot size of 10 nm or less at a surface of the semiconductor article;
- and
- editing the semiconductor article based on the information.
1 more element
Dependencies are inferred from the claim text.