US 2009/0157360 A1 · Methods and system for lithography process window simulation

Abstract

A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. In one given embodiment, the function for simulating the aerial images with focus and dose (exposure) variation is defined as: I(x,f,1+ε)=I0(x)+[ε·I0(x)+(1+ε)·a(x)·(f−f0)+(1+ε)·b(x)·(f−f0)2] where IO represents image intensity at nominal focus and exposure, fO represents nominal focus, f and ε represents an actual focus-exposure level at which the simulated image is calculated, and parameter “a” and “b” represent first order and second order derivative images with respect to focus change.

Claims22

Dependent claims

A method of simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features, said method comprising:

determining a function for generating a simulated image, said function accounting for process window variations associated with said lithographic process;
and
generating said simulated image utilizing said function;
said simulated image representing the imaging result of said target design for said lithographic process.

1 more element

Dependencies are inferred from the claim text.

Methods and system for lithography process window simulation

Life of this patent

Methods and system for lithography process window simulation

Life of this patent

Abstract

Claims22