Method for manufacturing semiconductor device
AssigneeSeiko Instruments Inc.
InventorsTomomitsu Risaki, Jun Osanai
Life of this patent
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Abstract
Provided is a method of manufacturing a semiconductor device capable of providing a stable trench depth, including: forming, on a semiconductor substrate, a first film having a high etching selectivity with respect to the semiconductor substrate; forming, on the first film, a second film having a high etching selectivity with respect to the first film; etching a region of a part of the second film and the first film to expose a surface of the semiconductor substrate in the region; and etching the exposed surface of the semiconductor substrate to form a trench.
Claims6
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first film on a semiconductor substrate, the first film having a high etching selectivity with respect to the semiconductor substrate;
- forming a second film on the first film, the second film having a high etching selectivity with respect to the first film;
- etching a region of the second film and the first film by sequentially using a resist as a mask to expose a surface of the semiconductor substrate of the region;
- and
- removing the mask of the resist and simultaneously etching the second film and the surface of the semiconductor substrate having been exposed to form a trench in the surface of the semiconductor substrate until a detection of a monitored element which constitutes the first film.
A method of manufacturing a semiconductor device, comprising:
- forming a first film on a semiconductor substrate, the first film having a high etching selectivity with respect to the semiconductor substrate;
- forming a second film on the first film, the second film having a high etching selectivity with respect to the first film;
- etching a region of the second film, the region including a region on which a trench is formed;
- etching a part of the first film exposed in the etched region of the second film into a trench shape to be formed;
- and
- etching the second film and the exposed surface of the semiconductor substrate simultaneously to form a trench in the surface of the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element which constitutes the first film increases.
Dependencies are inferred from the claim text.