Inhibition of metal diffusion arising from laser dicing

A method comprising:

• dividing a wafer into at least one chip, wherein said chip includes internal metallic features, and wherein said dividing deposits at least one metallic substance on a surface of said chip, wherein said metallic substance comprises one of Copper, Aluminum, and Tungsten;
• after said dividing, exposing said chip to a heated ambient environment having a certain partial pressure of a gaseous chemical agent, wherein said chemical agent is capable of bonding with said metallic substance;
• and
• performing a wet chemical etch on said chip,
• wherein said chemical agent comprises oxygen, wherein said chemical agent comprises at least one of sulfur, chlorine, nitrogen and hydrogen,
• wherein said exposing process controls said environment so as to bond said chemical agent to said metallic substance to create a molecule that is incapable of diffusing to an interior of said chip, such that said molecule is permanently bonded to an exterior of said chip throughout a useful life of said chip,
• wherein said exposing of said chip to said environment is performed for a predetermined time period,
• wherein said environment comprises a temperature above a temperature at which said dividing is performed, and
• wherein said wet chemical etch comprises chemistry capable of dissolving said metallic substance.