Method for manufacturing metal-insulator-metal capacitor of semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a logic metal and a capacitor lower metal on a first insulating film that is formed on a semiconductor substrate;
• selectively etching a portion of the capacitor lower metal to a predetermined depth;
• forming a second insulating film over an entire upper surface of the logic metal, the first insulating film, and the etched capacitor lower metal;
• forming a capacitor upper metal on the second insulating film in a region corresponding to the etched portion of the etched capacitor lower metal;
• forming an interlayer insulating film over an entire upper surface of the second insulating film and the capacitor upper metal;
• selectively etching the interlayer insulating film and the second insulating film, thereby forming a first contact hole through which a portion of the capacitor upper metal is exposed, and a second contact hole through which an non-etched portion of the etched capacitor lower metal is exposed;
• and
• filling in the first and second contact holes with a conductive material, thereby forming portions of a metal line.