Protection of sige during etch and clean operations
AssigneeInternational Business Machines Corporation
InventorsASHIMA B. CHAKRAVARTI, ZHIJIONG LUO, RENEE TONG MO, SHREESH NARASIMHA, KATSUNORI ONISHI
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Abstract
A method of making a semiconductor device includes forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well, subjecting the transistor structure to plasma oxidation, and removing spacer material from the transistor structure.
Claims3
1-20. (canceled)
A method of making a semiconductor device comprising one of an Si substrate and a silicon-on-insulator (SOI) substrate, the method comprising:
- forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well;
- subjecting the transistor structure to plasma oxidation by growing an oxide layer on the embedded epitaxial stressed material;
- forming a spacer material on a gate structure of the transistor structure;
- and
- removing the spacer material from the transistor structure,
- wherein the plasma oxidation protects the embedded epitaxial material in the source and drain region from one or more resist strips and/or cleaning steps, and
- wherein the subjecting protects the source and drain region from metallic contamination during spacer removal.
A method of making a semiconductor device comprising one of an Si substrate and a silicon-on-insulator (SOI) substrate, the method comprising:
- forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well;
- growing an oxide layer on the transistor structure utilizing plasma oxidation;
- removing the oxide layer using a silicide preclean;
- and
- removing a spacer material from the transistor structure,
- wherein the plasma oxidation protects the embedded epitaxial material in the source and drain region from one or more resist strips and/or cleaning steps, and
- wherein the growing protects the source and drain region from metallic contamination during spacer removal.
Dependencies are inferred from the claim text.