Forming thin film transistors using ablative films
OwnerGilbert A. Hawkins, Peter A. Stolt +1inventors
InventorsGilbert A. Hawkins, Peter A. Stolt, M. Zaki Ali
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Abstract
An ablative film arranged in a stack having a flexible substrate disposed in the stack; an active layer, disposed in the stack, including at least a semiconductor material; and at least one ablative layer, disposed in the stack over the active layer, that is removable by image wise exposure to radiation from the top side of the stack.
Claims37
An ablative film arranged in a stack, the ablative film comprising:
- a flexible substrate disposed in the stack;
- an active layer, disposed in the stack, including at least a semiconductor material;
- and
- at least one ablative layer, disposed in the stack over the active layer, that is removable by image wise exposure to radiation from the top side of the stack.
A method for creating a transistor on an ablative film, the method comprising the steps of:
- (a) providing at least one active layer having a semi-conductor surrounded entirely or partially by an insulator;
- (b) providing at least one ablative layer in contact with the active layer;
- (c) ablating the ablative layer at one or more locations which respectively creates one or more recess portions in the ablative layer;
- and
- (d) providing an electrical conductor in each of the one or more recess portions.
A method for creating a transistor from an ablative film, the method comprising the steps of (a) ablating a portion of the ablative film;
- (b) providing liquid deposition by jetting, and (c) annealing the liquid deposition.
A method for forming a transistor from an ablative layer and an active layer, the method comprising the steps of providing a plurality of separate ablated channels ablated to a common depth in the ablative layer for forming source and drain regions and at least one channel terminating on an active layer in the gate region
A method for forming a transistor from an ablative layer and an active layer, the method comprising the steps of:
- terminating the channels on the active layer contiguously in the regions comprising the gate, drain, and source.
A method for forming a transistor, the method comprising the steps of:
- (a) providing a layered stack in the order of substrate, ablative layer, active layer and a second ablative layer;
- (b) disposing a source and drain in both ablative layers and the active layer;
- (c) irradiating the source and drain that causes a sidewall spacer to form on both the source and drain;
- and
- (d) forming a gate between the sidewall spacers.
A method for creating a transistor, the method comprising the steps of:
- (a) providing at least one active layer having a conductor;
- (b) providing at least one ablative layer in contact with the active layer;
- (c) ablating the ablative layer at two locations which respectfully creates two recess portions in the ablative layer;
- (d) providing a contact in each of the two recess portions;
- (e) ablating the ablative layer a subsequent time between the two contacts;
- (f) placing a dielectric on at least a portion of the contacts and on the active layer between the two contacts;
- and
- (g) placing a metal material on the dielectric between the contacts for forming a gate structure.
A method for creating a transistor, the method comprising the steps of:
- (a) providing at least one active layer having a conductor;
- (b) providing at least one ablative layer in contact with the active layer;
- (c) ablating the ablative layer at two locations which respectively creates two recess portions in the ablative layer;
- (d) providing a contact in each of the two recess portions;
- (e) ablating the ablative layer a subsequent time between the two contacts;
- (f) placing a dielectric on at least a portion of the contacts and on the active layer between the two contacts;
- and
- (g) placing a metal material on the dielectric between the contacts for forming a gate structure.
A method for creating transistor circuits, the method comprising the steps of:
- (a) providing a substrate;
- (b) providing at least one ablative layer that is removable by exposure to radiation;
- (c) providing an active layer including a semiconductor material surrounded at least partially by a dielectric;
- and
- (d) providing conductive materials, deposited in a plurality of ablated channels, electrically connecting a plurality of the transistor structures to form transistor circuits.
Dependencies are inferred from the claim text.