Semiconductor Device and Method of Forming Integrated Passive Device Module

A method of manufacturing a semiconductor device, comprising:

• providing a substrate with an insulation layer disposed on a top surface of the substrate;
• forming an integrated passive circuit over the top surface of the substrate;
• removing the substrate;
• and
• mounting a printed circuit board over the insulation layer, wherein the printed circuit board includes:
• an insulating polymer film layer, and
• an interconnect structure deposited over the insulating polymer film layer.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate having an insulation layer disposed on a top surface of the substrate;
• forming an integrated passive circuit over the substrate by:
• depositing a conductive layer over the substrate, and
• depositing a dielectric layer over the substrate;
• forming a passivation layer over the integrated passive circuit;
• etching a first opening in the passivation layer to expose a first surface of the integrated passive circuit;
• removing the substrate;
• etching a first opening in the insulation layer to expose a second surface of the integrated passive circuit;
• depositing an insulating polymer film over the insulation layer;
• and
• forming a metal layer over the insulating polymer film, wherein the metal layer contacts the second surface of the integrated passive circuit.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate with an insulation layer deposited on a top surface of the substrate;
• forming an integrated passive circuit over the top surface of the substrate;
• surface mounting IC dies or discrete components on a first surface of the integrated passive circuit with flip-chip or wire bonding;
• molding the wafer with dielectric molding material;
• removing the substrate;
• depositing an insulating polymer film layer over the insulation layer;
• and
• depositing an interconnect structure over the insulating polymer film layer.