Method for Patterning Using Phase-Change Material
AssigneePalo Alto Research Center Incorporated
InventorsScott Limb, Uma Srinivasan
Life of this patent
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Abstract
A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer.
Claims14
A method for producing a patterned layer of target material over a substrate comprising the steps of:
- forming a print-patterned mask structure over said substrate such that a first surface of said mask structure is oriented toward said substrate and a second surface of said mask structure is oriented away from said substrate;
- directing energized particles of said target material toward said substrate and said mask structure such that:
- said particles of said target material incident on mask structure enter said second surface of said mask structure and minimally accumulate, if at all, on the surface of said mask structure;
- and
- said target material otherwise accumulates as a generally uniform layer over said substrate.
A method for producing a patterned layer of target material over a substrate comprising the steps of:
- forming a print-patterned mask structure over said substrate such that a first surface of said mask structure is oriented toward said substrate and a second surface of said mask structure is oriented away from said substrate;
- directing particles of said target material toward said substrate and said mask structure, said particles sufficient kinetically and/or thermally energized and said mask structure sufficiently permeable that said particles of said target material incident on mask structure enter said second surface of said mask structure and minimally accumulate, if at all, on the surface of said mask structure, and said target material otherwise accumulates as a generally uniform layer over said substrate;
- and
- removing said print-patterned mask structure together with target material therein by applying a solvent and/or etchant to said second surface of said print-patterned mask structure which dissolves said print-patterned mask structure but does not affect said generally uniform layer of target material which has accumulated over said substrate.
Dependencies are inferred from the claim text.