Phase-shift mask and method for forming a pattern
AssigneeNanya Technology Corporation
InventorsKuo-Kuei Fu, Yuan-Hsun Wu, Ya-Chih Wang
Life of this patent
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Abstract
A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.
Claims8
In a phase-shift mask having a substrate with a pattern formed on the substrate, wherein the pattern is constituted of a first phase-shift region and a second phase-shift region adjacent to said first phase-shift region, wherein the improvement comprises:
- a third phase-shift region formed on at least one terminal end of second phase-shift region, wherein a phase difference exists between said third phase-shift region and said first phase-shift region.
Dependencies are inferred from the claim text.