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US 2009/0154517 A1Published application
Hybrid laser diode for single mode operation and method of fabricating the same
AssigneeElectronics and Telecommunications Research Institute
InventorsYoung-Ahn LEEM, Ki-Soo KIM, Jung-Ho SONG, O-Kyun KWON, Gyung-Ock KIM
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Abstract
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Claims17
A hybrid laser diode comprising:
- a silicon layer;
- an active pattern disposed on the silicon layer;
- and
- a bonding layer interposed between the silicon layer and the active pattern,
- wherein the bonding layer includes diffraction patterns constituting a Bragg grating.
2 more elements
A hybrid laser diode comprising:
- a silicon layer;
- a compound semiconductor pattern disposed on the silicon layer;
- and
- a resonator assembly formed between the silicon layer and the compound semiconductor pattern, wherein the resonator assembly is formed of materials having lower refractive indices than the silicon layer and the compound semiconductor pattern.
1 more element
A method for fabricating a hybrid laser diode, comprising:
- preparing a substrate having a silicon layer;
- forming a silicon oxide layer on the silicon layer;
- attaching a compound semiconductor layer on the substrate by using the silicon oxide layer as a bonding layer;
- and
- forming an active pattern by patterning the compound semiconductor layer, wherein the forming of the silicon oxide layer comprises forming a plurality of openings constituting a Bragg grating, and the openings are patterned such that the Bragg grating has a coupling coefficient for single mode oscillation.
2 more elements
Dependencies are inferred from the claim text.