Managing redundant memory in a voltage island
AssigneeInternational Business Machines Corporation
InventorsHarry I. Linzer, Michael R. Ouellette
Life of this patent
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AssigneeInternational Business Machines Corporation
InventorsHarry I. Linzer, Michael R. Ouellette
Estimating the term…
An approach that manages redundant memory in a voltage island is described. In one embodiment there is a design structure embodied in a machine readable medium used in a design process of a semiconductor device. In this embodiment, the design structure includes one or more voltage islands representing a power cycled region. Each of the one or more voltage islands comprises at least one memory using redundancy and a repair register associated with each memory using redundancy. One or more non-power cycled regions are located about the one or more voltage islands. Each of the one or more non-power cycled regions comprises at least one memory using redundancy and a repair register associated with each memory using redundancy. A redundancy initialization component is coupled to the one or more voltage islands and the one or more non-power cycled regions. The redundancy initialization component is configured to initialize each memory using redundancy and associated repair register with repair data. The redundancy initialization component is configured to initialize a memory using redundancy and associated repair register with repair data independent of, or in conjunction with, the initialization of other memories using redundancy and associated repair registers.
A semiconductor device, comprising:
The semiconductor device according to 1, further comprising one or more shadow repair registers coupled to the one or more voltage islands and the one or more non-power cycled regions, wherein each repair register associated with memory using redundancy comprises a corresponding shadow repair register.
A design structure embodied in a machine readable medium used in a design process of a semiconductor device, the design structure comprising:
The design structure according to 8, further comprising one or more shadow repair registers coupled to the one or more voltage islands and the one or more non-power cycled regions, wherein each repair register associated with memory using redundancy comprises a corresponding shadow repair register.
Dependencies are inferred from the claim text.