ALGORITHM FOR CHARGE LOSS REDUCTION AND Vt DISTRIBUTION IMPROVEMENT

A method of programming or erasing one or more memory cells on a wordline of a memory array, the method comprising:

• providing one or more unprogrammed memory cells on a selected wordline to be programmed or erased;
• measuring a threshold voltage (Vt) uniquely associated with the selected wordline for each of the one or more memory cells on the selected wordline;
• determining an average threshold voltage Vt(avg) uniquely associated with the selected wordline based on the measured threshold voltages;
• determining a program verify level uniquely associated with the selected wordline and the determined average threshold voltage Vt(avg);
• and
• programming one or more of the memory cells of the selected wordline to a predefined program level uniquely associated with the determined program verify level uniquely associated with the selected wordline;
• or
• erasing one or more of the memory cells of the selected wordline to the determined program verify level.

A memory device, comprising:

• a memory array;
• a threshold voltage measuring component configured to measure a threshold voltage (Vt) uniquely associated with a selected wordline for one or more memory cells on the selected wordline;
• and
• an average threshold voltage determining component configured to determine an average threshold voltage Vt(avg) uniquely associated with the selected wordline based on the measured threshold voltages on the selected wordline of the memory array;
• wherein the memory device is configured to program or erase one or more memory cells on a selected wordline of the memory array.

An electronic device, comprising:

• a user input configured to allow a user to input data;
• a user output configured to output data to a user;
• a central processing unit (CPU) operatively coupled to the user input and the user output and configured to receive and process the user input and to output the user output;
• and
• a memory operatively coupled to the CPU and configured to receive data from and send data to the CPU, the memory comprising a memory array, a threshold voltage measuring component, and an average threshold voltage determining component, the memory configured to program or erase one or more memory cells on a selected wordline of the memory array.