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AssigneeMacronix International Co., Ltd.
InventorsWei-Chih Chien, Kuo-Pin Chang, Yi-Chou Chen, Erh-Kun Lai, Kuang-Yeu Hsieh
Estimating the term…
Memory devices and methods for operating such devices are described herein. A method as described herein for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change the resistance state from a first resistance state in a plurality of resistance states to a second resistance state in the plurality of resistance states. The sequence of bias arrangements comprise a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.
A method for operating a memory device comprising a plurality of metal-oxide memory elements programmable to a plurality of resistance states, the method comprising:
The memory device comprising:
Dependencies are inferred from the claim text.