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OwnerSoshchin Naum, Wei-Hung Lo +1inventors
InventorsSoshchin Naum, Wei-Hung Lo, Chi-Ruei Tsai
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The present invention discloses a warm-white semiconductor and its phosphor with red-spectrum garnet structure, comprising at least a semiconductor heterojunction and a light conversion film. The semiconductor heterojunction and light conversion film are characterized by that the warm-white luminescence is made up of three spectral bands which are related to the radiation of the activators, Ce, Pr, and Dy, in the inorganic phosphor of the light conversion film. The stoichiometric formula of the phosphor is (Y2-x-y-z-pGdxCeyPrzDypO3)1.5±α(Al2O3)2.5±β. The chromaticity coordinates of the light emitting diode are 0.405≦x≦0.515 and 0.355≦y≦0.550; color temperature T≦4000K; rendering index R≧80; and dominant wavelength λ≧565 nm.
A warm-white semiconductor, comprising a semiconductor heterojunction and a light conversion layer, characterized by that the warm-white luminescence is made up of three spectral bands which are related to the radiation of the activators, Ce, Pr, and Dy, in the inorganic phosphor of the light conversion film, and the stoichiometric formula of the phosphor is (Y2-x-y-z-pGdxCeyPrzDypO3)1.5±α(Al2O3)2.5±β.
A phosphor with red-spectrum garnet structure employed in warm-white light emitting diode having a stoichiometric formula of (Y2-x-y-z-pGdxCeyPrzDypO3)1.5±α(Al2O3)2.5±β.
Dependencies are inferred from the claim text.