Semiconductor device and method for manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorMitsuhiro Horikawa
Life of this patent
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Abstract
A semiconductor device including: a conducting plug provided in an interlayer insulating film over a semiconductor substrate; and a capacitor including a lower electrode provided over the conducting plug, the lower electrode being connected to the conducting plug, a dielectric film provided on the lower electrode, and an upper electrode provided on the dielectric film. The lower electrode includes a conducting pillar and a conducting outer layer provided over at least a circumferential side surface of the conducting pillar. The dielectric film covers at least a circumferential side surface of the lower electrode, and is contact with the conducting outer layer.
Claims14
A semiconductor device comprising:
- a conducting plug provided in an interlayer insulating film over a semiconductor substrate;
- and
- a capacitor comprising
- a lower electrode provided over the conducting plug, the lower electrode being connected to the conducting plug,
- a dielectric film provided on the lower electrode, and
- an upper electrode provided on the dielectric film,
- wherein the lower electrode comprises a conducting pillar and a conducting outer layer provided over at least a circumferential side surface of the conducting pillar, and
- the dielectric film covers at least a circumferential side surface of the lower electrode, the dielectric film being contact with the conducting outer layer.
A method for manufacturing a semiconductor device, comprising:
- forming a conducting plug in a first interlayer insulating film over a semiconductor substrate;
- forming a second interlayer insulating film over the conducting plug and the first interlayer insulating film;
- forming a hole penetrating the second interlayer insulating film to reach the conducting plug;
- forming a first conducting film over a surface including an internal wall of the hole, forming a second conducting film to fill the hole, and removing the first conducting film and the second conducting film outside the hole, thereby obtaining in the hole a lower electrode comprising a conducting pillar made of the second conducting film, and a conducting outer layer including the first conducting film covering a circumferential side surface of the conducting pillar;
- removing the second interlayer insulating film to expose the lower electrode;
- forming a dielectric film covering the lower electrode;
- and
- forming a conducting film for an upper electrode on the dielectric film such that the conducting film covers the lower electrode.
A method for manufacturing a semiconductor device, comprising:
- forming a conducting plug in a first interlayer insulating film over a semiconductor substrate;
- forming a second interlayer insulating film over the conducting plug and the first interlayer insulating film;
- forming a hole penetrating the second interlayer insulating film to reach the conducting plug;
- forming a first conducting film to fill the hole to form a conducting pillar made of the first conducting film in the hole;
- removing the second interlayer insulating film to expose the conducting pillar;
- forming a second conducting film covering the conducting pillar to form a lower electrode comprising the conducting pillar made of the first conducting film, and a conducting outer layer including the second conducting film covering the top surface and the circumferential side surface of the conducting pillar;
- forming a dielectric film covering the lower electrode;
- and
- forming a conducting film for an upper electrode on the dielectric film such that the conducting film covers the lower electrode.
Dependencies are inferred from the claim text.