Inductor of semiconductor device and method for manufacturing the same

Abstract

In a semiconductor device having a first region formed with the inductor and a second region formed with transistors, the inductor includes a deep well region formed in the silicon substrate beneath the first and second regions, a well region formed on the deep well region in the second region, N type shield regions formed to have the same depth as the well region, and P type shield regions arranged to alternate with the N type shield regions, the transistors formed on the silicon substrate in the second region, an insulating film formed over an entire surface of the silicon substrate such that the insulating film covers the transistors, and a metal line formed on the insulating film in the first region such that the metal line corresponds to the N and P type shield regions.

Dependencies are inferred from the claim text.