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US 2009/0152643 A1Published application
Semiconductor structures
OwnerMine-Yuan Huang, Li-Hung Chiinventors
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Abstract
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a first metal-oxide-semiconductor (MOS), a second MOS, a first semiconductor region, and a second semiconductor region. The first and the second MOSs are formed on the substrate. The first semiconductor region is formed between the substrate and the first MOS. The second semiconductor region is formed between the substrate and the second MOS. The first semiconductor region and the second semiconductor region isolate the first MOS from the second MOS.
Claims20
A semiconductor structure comprising:
- a substrate;
- a first metal-oxide-semiconductor (MOS) formed on the substrate;
- a second MOS formed on the substrate;
- a first semiconductor region formed between the substrate and the first MOS;
- and
- a second semiconductor region formed between the substrate and the second MOS,
- wherein the first semiconductor region and the second semiconductor region isolate the first MOS from the second MOS.
4 more elements
Dependencies are inferred from the claim text.