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US 2009/0152623 A1Published application
Fin transistor
AssigneeKabushiki Kaisha Toshiba
InventorsMasakazu GOTO, Nobutoshi AOKI, Takashi IZUMIDA, Kimitoshi OKANO, Satoshi INABA, Ichiro MIZUSHIMA
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Abstract
A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode.
Claims20
A fin transistor comprising:
- a substrate;
- a plurality of semiconductor fins formed on the substrate;
- a gate electrode covering a channel region of the semiconductor fins;
- and
- a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and
- the member being made of a different material from the gate electrode.
3 more elements
A fin transistor comprising:
- a semiconductor substrate;
- a plurality of semiconductor fins formed over the substrate so as to be isolated from the semiconductor substrate by an insulating layer;
- a gate electrode covering a channel region of the semiconductor fins;
- and
- a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and
- the member being made of a different material from the gate electrode.
3 more elements
Dependencies are inferred from the claim text.