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US 2009/0152551 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics.
Claims11
A semiconductor device comprising:
- a thin film transistor comprising a gate electrode formed over a substrate, an insulating film formed over the gate electrode, a semiconductor film formed over the insulating film, source and drain regions formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region;
- a first gate wiring being contiguous to the gate electrode;
- a second gate wiring along the first gate wiring;
- a first source wiring being contiguous to the source electrode;
- a second source wiring along the first source wiring;
- a pixel electrode comprising a conductive material, formed over the thin film transistor, and connected to the drain electrode;
- and
- a convex portion arranged in the region surrounded by the first and second gate wirings and the first and second source wirings wherein a surface of the pixel electrode is uneven due to the existence of the convex portion,
- wherein the convex portion includes a film which comprise a material same as the gate electrode.
6 more elements
A display device comprising:
- a thin film transistor comprising a gate electrode formed over a substrate, a first insulating film formed over the gate electrode, a semiconductor film formed over the first insulating film, source and drain regions formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region;
- a first gate wiring being contiguous to the gate electrode;
- a second gate wiring along the first gate wiring;
- a first source wiring being contiguous to the source electrode;
- a second source wiring along the first source wiring;
- a pixel electrode comprising a conductive material, formed over the thin film transistor, and connected to the drain electrode;
- a convex portion arranged in the region surrounded by the first and second gate wirings and the first and second source wirings wherein a surface of the pixel electrode is uneven due to the existence of the convex portion;
- a second insulating film comprising inorganic material and covering the thin film transistor;
- and
- an alignment film for orienting liquid crystal molecules formed over the second insulating film,
- wherein the alignment film is in contact with the surface of the pixel electrode being uneven due to the existence of the convex portion, and
- wherein the convex portion includes a film which comprise a material same as the gate electrode.
9 more elements
A display device comprising:
- a thin film transistor comprising a gate electrode formed over a substrate, an first insulating film formed over the gate electrode, a semiconductor film formed over the first insulating film, source and drain regions formed over the semiconductor film, a source electrode over the source region, and a drain electrode formed over the drain region;
- a pixel electrode formed over the substrate and electrically connected to the thin film transistor;
- and
- a convex portion located between the substrate and the pixel electrode wherein a surface of the pixel electrode is uneven due to the existence of the convex portion,
- a second insulating film comprising inorganic material and covering the thin film transistor;
- and
- an alignment film for orienting liquid crystal molecules formed over the second insulating film,
- wherein the alignment film is in contact with the surface of the pixel electrode being uneven due to the existence of the convex portion, and
- wherein the convex portion includes a film which comprise a material same as the gate electrode.
6 more elements
Dependencies are inferred from the claim text.