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AssigneesInteruniversitair Microelektronica Centrum (IMEC) vzw, University of South Toulon Var
InventorsLorene Courtade, Judit Lisoni Reyes, Ludovic Goux, Christian Turquat, Christophe Muller, Dirk Wouters
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The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients.
A resistivity-switching non-volatile memory element, comprising a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode, the layer having a thickness between the top and bottom electrode, the resistivity-switching metal-oxide layer having a gradient of oxygen over the thickness of the layer.
A method for forming a resistivity-switching non-volatile memory element, comprising:
A method of forming a resistivity-switching non-volatile memory element that includes (i) a bottom electrode having an upper layer of metal, (ii) a resistivity-switching metal-oxide layer with an oxygen gradient over its layer thickness, the layer being formed by thermal oxidation of a part of the upper metal layer, and (iii) a top electrode formed on the metal-oxide layer, the method comprising:
Dependencies are inferred from the claim text.