Semiconductor device mask, method of forming the same and method of manufacturing semiconductor device using the same

Abstract

Embodiments relate to a semiconductor device mask in which an optical proximity correction (OPC) process is performed to compensate for varying degrees of planarization of a lower layer and a method of forming a mask pattern. In embodiments, a method of forming a semiconductor device mask includes dividing a semiconductor substrate into a plurality of local regions. Densities of patterns of the local regions are determined. A degree of dishing of the local regions is also determined. The local regions are classified into a first group in case where the degree dishing of the local regions are within an error range and a second group in case where the degree of dishing of the local regions exceed the error range. A mask data preparation process is performed with a size retrieved from a basic database in the first group. A mask data preparation sizing rule different from the mask data preparation process is applied to the second group. An optical proximity correction process is performed using a database of the first group and the second group. A semiconductor device mask according to an embodiment is formed using a semiconductor device mask formation process.

Dependencies are inferred from the claim text.