Cmp apparatus and method of polishing wafer using cmp

A wafer polishing method using CMP, comprising:

• a polishing pad setting step for setting a new polishing pad;
• a threshold value recording step for recording a threshold value that has been corrected based on a thickness of the new polishing pad;
• a high-speed polishing step for performing high-speed polishing of a wafer while a thickness of a film being polished is monitored using a film thickness sensor;
• a polishing condition switching step for switching from high-speed polishing to low-speed polishing when an output of the film thickness sensor reaches the threshold value;
• and
• a low-speed polishing step for performing low-speed polishing of the wafer as far as a polishing terminal point.

A method of polishing a wafer, comprising:

• performing a first polishing on the wafer at a first speed;
• performing a second polishing on the wafer at a second speed when a film to be polished on the wafer reaches a threshold value;
• and
• calibrating the threshold value when a new polishing pad has been set.