Method for etching using advanced patterning film in capacitive coupling high frequency plasma dielectric etch chamber
AssigneeApplied Materials, Inc.
InventorsJUDY WANG, Shing-Li Sung, Shawming Ma
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Abstract
A method for etching wafers using advanced patterning film (APF) to reduce bowing and improve bottom-to-top ratios includes providing a wafer having an APF layer into a processing chamber, wherein the processing chamber is configured with a power source operating at about 162 MHz, supplying a process gas into the chamber, applying a source power using the 162 MHz power source, and applying a bias power to the wafer. The process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO). The ratio of H2:N2 is about 1:1. Additionally, the wafer temperature is adjusted to improve the etching characteristics.
Claims27
A method of etching an advanced pattern film (APF), comprising:
- providing a wafer comprising an APF layer into a processing chamber, wherein said processing chamber is configured with a power source operating at about 162 MHz.;
- supplying a process gas into said chamber, wherein said process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO) and the ratio of H2:N2 is about 1:1;
- applying a source power using said 162 MHz power source;
- and
- applying a bias power to said wafer.
A method of etching an advanced pattern film (APF), comprising:
- providing a wafer comprising an APF layer into a processing chamber, wherein said processing chamber is configured with a power source operating at about 162 MHz.;
- supplying a process gas into said chamber, wherein said process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO) and the ratio of H2:N2 is about 3:1;
- applying about 2000 watts of power to said power source operating at 162 MHz;
- applying a bias of about 900 watts to said wafer;
- and
- maintaining a process pressure of about 100 millitorr.
A method of etching an advanced pattern film (APF), comprising:
- providing a wafer comprising an APF layer into a processing chamber, wherein said processing chamber is configured with a power source operating at about 162 MHz.;
- adjusting the temperature of the wafer to be between 20° C. and 60° C.;
- supplying a process gas into said chamber, wherein said process gas comprises hydrogen gas (H2), nitrogen gas (N2), and carbon monoxide gas (CO);
- applying a source power using said 162 MHz power source;
- applying a bias power to said wafer;
- and
- maintaining a process pressure of about 100 millitorr.
Dependencies are inferred from the claim text.