Planarization method
AssigneeNanya Technology Corporation
InventorsYuan Tsung Chang, Chih Neng Chang, Bang Tai Tang
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Abstract
A planarization method is provided. The method includes the steps of providing a substrate with a first region and a second region, and having a plurality of protrusions of different densities on a surface of said substrate; forming a first dielectric layer on the substrate to fill spaces between the plurality of protrusions; forming a second dielectric layer on the first dielectric layer, wherein the second dielectric layer is formed with a protruding tip having a height higher than heights of the protrusions; and partially removing said first dielectric layer and said second dielectric layer to planarize said first dielectric layer and said second dielectric layer and expose top surfaces of said protrusions.
Claims6
A planarization method comprising:
- providing a substrate with a first region and a second region, and having a plurality of protrusions of different densities on a surface of said substrate;
- forming a first dielectric layer on said substrate to fill spaces between said plurality of protrusions;
- forming a second dielectric layer on said first dielectric layer, wherein said second dielectric layer is formed with a protruding tip having a height higher than heights of said protrusions;
- and
- partially removing said first dielectric layer and said second dielectric layer to planarize said first dielectric layer and said second dielectric layer and expose top surfaces of said protrusions.
A method of determining a reference in a base having spaces of different densities to perform chemical mechanical polishing process, comprising:
- forming a first dielectric layer on said base to fill in said spaces;
- and
- forming a second dielectric layer on said first dielectric layer, wherein said second dielectric layer has an uppermost protruding tip such that said reference to perform chemical mechanical polishing process is provided.
Dependencies are inferred from the claim text.