Method of forming contact of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorWan Soo Kim
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Abstract
The present invention relates to a method of forming a contact of a semiconductor device. According to a method of forming a contact of a semiconductor device in accordance with an aspect of the present invention, first and second insulating layers are sequentially formed over a semiconductor substrate. A contact hole is formed by sequentially etching the first and second insulating layers. An aperture portion of the contact hole is widened by etching the second insulating layer. A conductive material is gap-filled over an entire surface including the contact hole, thus forming a contact.
Claims19
A method of forming a contact of a semiconductor device, the method comprising:
- sequentially forming first and second insulating layers over a semiconductor substrate;
- forming a contact hole by sequentially etching the first and second insulating layers;
- widening an aperture portion of the contact hole by etching at least the second insulating layer;
- and
- gap-filling a conductive material over an entire surface including the contact hole, thus forming a contact.
A method of forming a contact of a semiconductor device, the method comprising:
- forming a junction region by performing an ion implantation process on a semiconductor substrate on which gate patterns are formed;
- forming a SAC (Self-Aligned Contact) passivation layer over an entire surface including the junction region;
- sequentially stacking first and second insulating layers over an entire surface including the SAC passivation layer;
- forming a contact hole through which the SAC passivation layer of the junction region is exposed by etching the first and second insulating layers;
- widening an aperture portion of the contact hole by etching at least the second insulating layer;
- forming a slope portion on at least the upper sidewalls of the contact hole by performing a dry etch process;
- forming a barrier layer over an entire surface including the contact hole;
- exposing the junction region by sequentially etching a bottom surface of the barrier layer and the SAC passivation layer of the junction region;
- and
- gap-filling the inside of the contact hole with a conductive material, thus forming a contact.
Dependencies are inferred from the claim text.