Glass-based SOI structures

A method of forming a semiconductor on glass structure, comprising:

• establishing an exfoliation layer on a semiconductor wafer;
• contacting the exfoliation layer of the semiconductor wafer to a glass substrate;
• and
• applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis and such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate, whereby, and such that the glass substrate includes:
• (i) a first substrate layer adjacent the exfoliation layer having a reduced modifier positive ion concentration, and (ii) a second substrate layer adjacent the first substrate layer having an enhanced modifier positive ion concentration,
• wherein the first substrate layer with the reduced modifier positive ion concentration is operable to inhibit ion re-migration from the glass substrate into the exfoliation layer.