Method for Reshaping Silicon Surfaces with Shallow Trench Isolation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hsiung Wang, Wen-Ting Chu, Eric Chen, Hsien-Wei Chin
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Abstract
A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- (A) providing a substrate with isolation regions formed therein;
- (B) forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness;
- (C) removing the dielectric layer;
- and
- (D) repeating steps (B)-(C) one or more times.
A method for manufacturing a semiconductor device, the method comprising:
- providing a substrate with isolation regions formed therein;
- performing a plurality of steps, each step comprising:
- forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness;
- and
- removing the dielectric layer.
A method of manufacturing a metal-oxide semiconductor field effect transistor, the method comprising:
- (A) providing a substrate with isolation regions formed therein;
- (B) forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness;
- (C) removing the dielectric layer;
- (D) repeating steps (B)-(C) one or more times;
- (E) forming a gate dielectric;
- (F) forming a gate electrode;
- (G) forming spacers;
- and
- (H) forming source/drain regions.
Dependencies are inferred from the claim text.