Lithography Masks and Methods of Manufacture Thereof
AssigneeInfineon Technologies AG
InventorsAlois Gutmann, Sajan Marokkey, Henning Haffner, Chandrasekhar Sarma, Haoren Zhuang, Matthias Lipinski
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Abstract
Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.
Claims33
A method of manufacturing a lithography mask, the method comprising:
- providing a first layer over a substrate;
- providing a second layer over the first layer;
- forming a resist layer over the second layer;
- patterning the resist layer to reveal the second layer;
- using the patterned resist layer as a mask to remove revealed portions of the second layer and then underlying portions of the first layer;
- etching the resist layer, using an isotropic etch, to uncover a further region of the second layer;
- etching the uncovered further region of the second layer;
- and
- removing remaining resist layer from over the second layer.
A method of manufacturing a lithography mask, the method comprising:
- disposing an attenuated phase shift material over a substrate;
- disposing an opaque material over the attenuated phase shift material;
- forming a resist layer over the opaque material;
- patterning the resist layer to uncover a portion of the opaque material;
- etching the uncovered opaque material to reveal the attenuated phase shift material;
- etching the attenuated phase shift material to reveal the substrate;
- trimming the resist layer to uncover a region of the opaque material;
- removing the uncovered portion of the opaque material to reveal a portion of the attenuated phase shift material;
- and
- removing remaining resist layer from over the opaque material.
A method of manufacturing a semiconductor device, the method comprising:
- manufacturing a lithography mask by:
- providing a first layer over a substrate,
- providing a second layer over the first layer,
- forming a resist layer over the second layer,
- patterning the resist layer to uncover the second layer,
- using the patterned resist layer as a mask to remove uncovered portions of the second layer and then underlying portions of the first layer,
- etching the resist layer, using an isotropic etch, to reveal a further region of the second layer,
- etching the revealed further region of the second layer, and
- removing remaining resist layer from over the second layer;
- providing a workpiece having a layer of photosensitive material disposed thereon;
- patterning the photosensitive material using the lithography mask as a mask;
- forming a plurality of features on the workpiece using the patterned photosensitive material layer as a mask;
- and
- processing the workpiece to form the semiconductor device, wherein at least a portion of the semiconductor device comprises the plurality of features.
Dependencies are inferred from the claim text.