Immersion lithography apparatus and method of forming pattern using the same
OwnerEun-Soo Jeonginventor
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Abstract
An immersion lithography apparatus and/or a method of forming a pattern. In an immersion lithography apparatus, an intermediate medium may not directly contact the photoresist layer and it may be possible to maximize the transport speed of a wafer without generating defects (e.g. water marks). An intermediate medium may include a first intermediate medium and a second intermediate medium that for an interface. The interface may be controlled by charges through an electrode to control a numerical aperture. Accordingly, a pattern may be formed using an immersion lithography apparatus capable of controlling a numerical aperture so that a relatively high refractive index can be achieved.
Claims20
An apparatus, comprising:
- a wafer stage configured to receive a wafer over the wafer stage;
- a pattern forming photoresist layer formed over the wafer;
- an intermediate medium receptor provided over the photoresist layer, wherein the intermediate medium receptor is configured to control refractive index over the photoresist layer;
- and
- a reticle provided over the intermediate medium receptor.
A method comprising:
- forming an underlayer over a semiconductor substrate;
- forming a photoresist layer over the underlayer;
- providing an intermediate medium receptor over the photoresist layer, wherein the intermediate medium receptor is configured to control refractive index over the photoresist layer by application of charges;
- controlling the charges applied to the intermediate medium receptor to set a predetermined numerical aperture;
- performing an immersion lithography process using the intermediate medium receptor to pattern the photoresist layer;
- and
- patterning the underlayer using the patterned photoresist layer.
Dependencies are inferred from the claim text.