Diode for adjusting pin resistance of a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorKook Whee Kwak
Life of this patent
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Abstract
A diode comprises a P-type well formed in a semiconductor substrate, at least one N-type impurity doping area formed in the P-type well, an isolation area formed to surround the N-type impurity doping area, a P-type impurity doping area formed to surround the isolation area, first contacts formed in the N-type impurity doping area in a single row or a plurality of rows, and second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.
Claims24
A diode comprising:
- a P-type well formed in a semiconductor substrate;
- at least one N-type impurity doping area formed in the P-type well;
- an isolation area formed to surround the N-type impurity doping area;
- a P-type impurity doping area formed to surround the isolation area;
- first contacts formed in the N-type impurity doping area in a single row or a plurality of rows;
- and
- second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.
A diode comprising:
- an N-type well formed in a semiconductor substrate;
- at least one P-type impurity doping area formed in the N-type well;
- an isolation area formed to surround the P-type impurity doping area;
- an N-type impurity doping area formed to surround the isolation area;
- first contacts formed in the P-type impurity doping area in a single row or a plurality of rows;
- and
- second contacts formed in the N-type impurity doping area in a single row or a plurality of rows,
- wherein pin resistance can be adjusted through changing any one of a distance between the P-type impurity doping area and the N-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.
A diode comprising:
- a P-type well formed in a semiconductor substrate;
- at least one N-type impurity doping area formed in the P-type well;
- at least one P-type impurity doping area formed in the P-type well to be parallel to the N-type impurity doping area;
- at least one isolation area formed between the N-type impurity doping area and the P-type impurity doping area;
- first contacts formed in the N-type impurity doping area in a single row or a plurality of rows;
- and
- second contacts formed in the P-type impurity doping area in a single row or a plurality of rows,
- wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.
A diode comprising:
- an N-type well formed in a semiconductor substrate;
- at least one P-type impurity doping area formed in the N-type well;
- at least one N-type impurity doping area formed in the N-type well to be parallel to the P-type impurity doping area;
- at least one isolation area formed between the P-type impurity doping area and the N-type impurity doping area;
- first contacts formed in the P-type impurity doping area in a single row or a plurality of rows;
- and
- second contacts formed in the N-type impurity doping area in a single row or a plurality of rows,
- wherein pin resistance can be adjusted through changing any one of a distance between the P-type impurity doping area and the N-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.
A diode wherein pin resistance can be adjusted through changing at least one of a distance between an anode and a cathode, a contact pitch of the anode, and a contact pitch of the cathode.
Dependencies are inferred from the claim text.