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US 2009/0020845 A1Published application
Shallow trench isolation structures for semiconductor devices including doped oxide film liners and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-suk Shin, Moon-han Park, Joo-won Lee, Jae-yoon Yoo, Tae-gyun Kim
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Abstract
A semiconductor device includes a substrate having a trench, a sidewall liner that covers inner walls of the trench, a doped oxide film liner on the sidewall liner in the trench, and a gap-fill insulating film that buries the trench on the doped oxide film liner. In order to form the doped oxide film liner, an oxide film liner is doped with a dopant under a plasma atmosphere. Related methods are also disclosed.
Claims23
A semiconductor device comprising:
- a substrate having a trench therein;
- a sidewall liner on inner walls of the trench;
- a doped oxide film liner on the sidewall liner in the trench, remote from the inner walls of the trench;
- and
- a gap-fill insulating film on the doped oxide film liner.
2 more elements
A method of manufacturing a semiconductor device comprising:
- forming a trench in a substrate;
- forming a sidewall liner on inner walls of the trench;
- forming a doped oxide film liner on the sidewall liner in the trench;
- and
- forming a gap-fill insulating film on the doped oxide film liner.
2 more elements
Dependencies are inferred from the claim text.