Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyoung-kyu Park, Byung-sun Kim, Tae-jung Lee, Kee-in Bang
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Abstract
Semiconductor device having an on-chip type electrostatic discharge (ESD) protection circuit and a method of manufacturing the same are provided. The on-chip type ESD protection circuit may include a first junction diode having a first conductive type region contacting a second conductive type region in a semiconductor substrate, and a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the semiconductor substrate.
Claims24
A semiconductor device that comprises an on-chip type electrostatic discharge (ESD) protection circuit comprising:
- a first junction diode having a first conductive type region contacting a second conductive type region in a semiconductor substrate;
- and
- a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region.
A semiconductor device that comprises an on-chip type ESD protection circuit, comprising:
- a first diode pair arranged in a first device region and including
- a first junction diode having a first conductive type region contacting a second conductive type region of the first device region in a semiconductor substrate, and
- a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the first device region;
- and
- a second diode pair arranged in a second device region and including
- a second junction diode having a first type region contacting a second conductive type region of the second device region in the semiconductor substrate, and
- a second schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the second device region.
Dependencies are inferred from the claim text.