Semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWoo-Jin CHO, Yong-Woo LEE, Jae-Seung HWANG, Sung-Un KWON, Min-Chul CHAE
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Abstract
One embodiment generally described herein can be characterized as a semiconductor device. The semiconductor device can include a first transistor on a semiconductor substrate. A first interlayer insulating layer may be disposed over the first transistor and includes a first recess region. A single-crystalline semiconductor pattern may be disposed in the first recess region. A single-crystalline semiconductor plug may connect the semiconductor substrate to the single-crystalline semiconductor pattern. A second transistor may be disposed on the single-crystalline semiconductor pattern.
Claims14
A semiconductor device, comprising:
- a first transistor on a semiconductor substrate;
- a first interlayer insulating layer covering the first transistor and including a first recess region;
- a single-crystalline semiconductor pattern disposed in the first recess region;
- a single-crystalline semiconductor plug connecting the semiconductor substrate to the single-crystalline semiconductor pattern;
- and
- a second transistor on the single-crystalline semiconductor pattern.
A semiconductor device, comprising:
- a first transistor on a semiconductor substrate, wherein the first transistor includes a first impurity region disposed in the semiconductor substrate;
- an interlayer insulating layer covering the first transistor;
- a plug disposed in the interlayer insulating layer, wherein a first end portion of the plug contacts the first impurity region;
- a single-crystalline semiconductor pattern contacting a second end portion of the plug, wherein at least a portion of the single-crystalline semiconductor pattern is below an upper surface of the interlayer insulating layer;
- and
- a second transistor on the single-crystalline semiconductor pattern, wherein the first transistor includes a first impurity region disposed in the single-crystalline semiconductor pattern.
Dependencies are inferred from the claim text.