Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device having a code-changed transistor, comprising:

• forming a gate pattern on a semiconductor substrate;
• forming a first impurity-doped region in the semiconductor substrate on one side of the gate pattern and forming a second impurity-doped region in the semiconductor substrate on the other side of the gate pattern;
• forming a salicide shielding film over the entire surface of the semiconductor substrate and gate pattern;
• forming a photoresist pattern on the salicide shielding film in order to perform a code change;
• patterning the salicide shielding film using the photoresist pattern as a mask in order to form a salicide shielding film pattern;
• forming a metal layer on the semiconductor substrate and salicide shielding film pattern,
• annealing the metal layer and salicide shielding film pattern in order to form a salicide;
• removing the remaining metal layer after forming the salicide and forming an insulating film on the semiconductor substrate;
• patterning the insulating film to form a first hole and a second hole;
• and
• forming a first line which comes into contact with the salicide shielding film pattern though the first hole in order to change a transistor design.

A transistor with a modified code, the transistor comprising:

• a gate pattern formed on a substrate;
• a first impurity-doped region formed in the substrate on one side of the gate pattern and a second impurity-doped region formed in the substrate on the other side of the gate pattern;
• a salicide shielding film pattern which partially covers either the first impurity-doped region or the second impurity-doped region;
• an insulating film formed on the substrate and salicide shielding film pattern, the insulating film including a first hole which exposes the salicide shielding film pattern and a second hole which partially exposes the first impurity-doped region or second impurity-doped region that is not partially covered by the salicide shielding film pattern;
• a first line coming in contact with the salicide shielding film pattern through the first hole;
• and
• a second line formed in the second hole, the second line connected to the first impurity-doped region or second impurity-doped region that is not partially covered by the salicide shielding film pattern.