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US 2009/0020798 A1Published application
Transistor structure and method of making the same
AssigneeNanya Technology Corporation
InventorsPei-Ing Lee, Shian-Jyh Lin
Life of this patent
Estimating the term…
Abstract
A transistor structure includes a gate trench. The gate trench includes a bottle-shape bottom. The bottle-shape bottom includes a first conductive material wider than its top. The top includes a second material in a substrate, a gate structure on the gate trench and electrically connected to the first conductive material, a source/drain doping region adjacent to the gate trench and a gate channel between the source/drain doping region.
Claims18
A transistor structure comprising:
- a substrate having a pre-determined lattice orientation;
- a gate trench defined in said substrate and composed of a top portion with a first width and a bottom portion communicating with the top portion and provided with a second width being larger than said first width, wherein said bottom portion comprises a vertical sidewall and a U-shaped bottom;
- a gate dielectric layer formed on a surface of said bottom portion of said gate trench;
- a conductive material filled in said gate trench and enclosed by said gate dielectric layer in said bottom portion;
- and
- a gate structure formed in said gate trench and electrically connected to said conductive material.
3 more elements
A method for forming a transistor structure comprising:
- providing a substrate with a pre-determined lattice orientation and forming a trench therein;
- defining a gate trench in said trench, said gate trench having a top portion with a first width and a bottom portion with a second width being larger than the first width;
- depositing a dielectric layer to cover a surface of said gate trench;
- filling a conductive material in said gate trench so as to be surrounded by said dielectric layer;
- and
- forming a gate structure, a source doping region and a drain doping region to form said transistor structure, wherein said gate structure is formed over said gate trench and electrically connected to said conductive material, and said source doping region and said drain doping region are formed in said substrate and disposed respectively in opposed sides of said gate trench.
3 more elements
Dependencies are inferred from the claim text.