Image Sensor and Method of Manufacturing the Same

Abstract

Provided are an image sensor and a method of manufacturing the same. The image sensor can be vertically arranged image sensor where the photodiode is provided above the circuitry on the substrate. The photodiode can be formed on a lower electrode provided electrically connected to a CMOS circuit on a substrate. The photodiode can have a PIN or PI photodiode structure including an intrinsic layer on the lower electrode and a conductive type layer on the intrinsic layer. A salicide layer can be disposed on the intrinsic layer, and the conductive type conduction layer can be disposed on the salicide layer. The intrinsic layer can be formed to create a light condensing portion, providing a convex-shaped upper surface.

Dependencies are inferred from the claim text.