Semiconductor device including MIM element and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorsMasayuki Furumiya, Takeshi Toda
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Abstract
A semiconductor device includes a first wiring layer which is provided above a semiconductor substrate and includes a first insulating film and a wiring buried in the first insulating film, a second insulating film provided above the first wiring layer, a third insulating film provided on the second insulating film, and a capacitor element provided on the third insulating film. The wiring includes an upper surface having a protruding portion. The capacitor element includes a lower electrode provided on the third insulating film, a capacitor insulating film provided on the lower electrode, and an upper electrode provided on the capacitor insulating film.
Claims14
A semiconductor device, comprising:
- a first wiring layer which is provided above a semiconductor substrate and includes a first insulating film and a wiring buried in the first insulating film;
- a second insulating film provided above the first wiring layer;
- a third insulating film provided on the second insulating film;
- and
- a capacitor element provided on the third insulating film, wherein the capacitor element includes:
- a lower electrode which is provided on the third insulating film, a capacitor insulating film which is provided on the lower electrode;
- and an upper electrode which is provided on the capacitor insulating film, and
- wherein the wiring includes an upper surface having a protruding portion.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating film above a semiconductor substrate;
- forming a wiring to be buried in the first insulating film;
- producing a protruding portion in an upper surface of the wiring;
- forming a second insulating film above the first insulating film and the wiring including the protruding portion;
- planarizing a surface of the second insulating film;
- forming a third insulating film on the second insulating film whose surface is planarized;
- forming a lower electrode on the third insulating film;
- forming a capacitor insulating film on the lower electrode;
- and
- forming an upper electrode on the capacitor insulating film.
Dependencies are inferred from the claim text.