Semiconductor Device with Reduced Capacitance Tolerance Value

A semiconductor voltage controlled oscillator, comprising a capacitance the numerical value of which determines an oscillator frequency, wherein the capacitance comprises a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit uncorrelated process fluctuations, and wherein a first capacitance value of the first capacitor element and a second capacitance value of the second capacitor element, to obtain a predetermined total capacitance value, are selected such that a process tolerance of the capacitance is minimized.

An analog/digital semiconductor converter, comprising a capacitance the numerical value of which determines a converting characteristic, wherein the capacitance comprises a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps that exhibit uncorrelated process fluctuations, and wherein a first capacitance value of the first capacitor element and a second capacitance value of the second capacitor element, to obtain a predetermined total capacitance value, are selected such that a process tolerance of the capacitance is minimized.

A semiconductor filter device, comprising a capacitance the numerical value of which determines a filter characteristic, wherein the capacitance comprises a parallel connection of at least a first and a second capacitor element, wherein the first and second capacitor elements are formed in respective manufacturing steps which exhibit uncorrelated process fluctuations, and wherein a first capacitance value of the first capacitor element and a second capacitance value of the second capacitor element, to obtain a predetermined total capacitance value, are selected such that a process tolerance of the capacitance is minimized.

An MOS type semiconductor device, comprising a capacitance the numerical value of that affects a device function, wherein the capacitance comprises a parallel connection of at least a first and second capacitor element, wherein the first capacitor element comprises an MOS capacitor element and the second capacitor element is formed in a manufacturing step that exhibits process fluctuations that are uncorrelated to the process fluctuations of MOS manufacturing steps, and wherein a first capacitance value of the first capacitor element and a second capacitance value of the second capacitor element, to obtain a predetermined total capacitance value, are selected such that a process tolerance of the capacitance is minimized.

An MOS type semiconductor device, comprising a capacitance the numerical value of which is relevant for a device function, wherein the capacitance comprises a parallel connection of at least a first and second capacitor element, wherein the first capacitor element comprises an MOS capacitor element containing an oxide layer of a first type or thickness, respectively, and the second capacitor element contains an oxide layer of a second type or thickness, respectively, and wherein a first capacitance value of the first capacitor element and a second capacitance value of the second capacitor element, to obtain a predetermined total capacitance value, are selected such that a process tolerance of the capacitance is minimized.