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US 2009/0014829 A1Published application
Semiconductor fuse box and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMin-Sung Kang, Kyung-Seok Oh, Joo-Sung Park, Jung-Hyun Shin
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Abstract
A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.
Claims19
1:
- A semiconductor fuse box comprising:
- a fuse structure;
- a protective structure disposed between the fuse structure and an integrated circuit structure;
- a pad formed at a bottom of the protective structure;
- and
- support lines formed to the sides of the pad.
3 more elements
2:
- The semiconductor fuse box of claim 1, wherein the support lines are comprised of one of polysilicon or a material having a melting point higher than that of the fuse structure.
3:
- The semiconductor fuse box of claim 1, wherein the pad is comprised of one of polysilicon or a material having a melting point higher than that of the fuse structure.
4:
- The semiconductor fuse box of claim 1, wherein the pad and the support lines are formed at a lower depth from a bottom of the fuse structure.
5:
- The semiconductor fuse box of claim 1, further comprising:
- an additional protective structure disposed between the fuse structure and another integrated circuit structure;
- an additional pad formed at a bottom of the additional protective structure;
- and
- additional support lines formed to the sides of the additional pad.
2 more elements
6:
- The semiconductor fuse box of claim 5, wherein the additional support lines are comprised of one of polysilicon or a material having a melting point higher than that of the fuse structure.
7:
- The semiconductor fuse box of claim 5, wherein the additional pad is comprised of one of polysilicon or a material having a melting point higher than that of the fuse structure.
8:
- The semiconductor fuse box of claim 5, wherein the additional pad and the additional support lines are formed at a lower depth from a bottom of the fuse structure.
9:
- The semiconductor fuse box of claim 5, wherein the fuse structure and the additional protective structure are surrounded by a passivation layer.
10:
- The semiconductor fuse box of claim 5, wherein the additional protective structure has at least one irregular side wall.
11:
- The semiconductor fuse box of claim 10, wherein the irregular side wall is comprised of a plurality of dimples.
12:
- The semiconductor fuse box of claim 5, wherein the additional protective structure extends beyond a top and a bottom of the fuse structure.
13:
- The semiconductor fuse box of claim 5, wherein the additional protective structure is disposed between the fuse structure and another fuse structure.
14:
- The semiconductor fuse box of claim 1, wherein the pad and the support lines are formed at a lower depth from a bottom of the fuse structure.
15:
- The semiconductor fuse box of claim 1, wherein the fuse structure and the protective structure are surrounded by a passivation layer.
16:
- The semiconductor fuse box of claim 1, wherein the protective structure has at least one irregular side wall.
17:
- The semiconductor fuse box of claim 16, wherein the irregular side wall is comprised of a plurality of dimples.
18:
- The semiconductor fuse box of claim 1, wherein the protective structure is disposed between the fuse structure and another fuse structure.
19:
- The semiconductor fuse box of claim 1, wherein the protective structure extends beyond a top and a bottom of the fuse structure.