Nanoelectromechanical transistors and methods of forming same

A nanoelectromechanical transistor (NEMT) comprising:

• a substrate including a gate adjacent thereto, a metal source region and a metal drain region;
• an electromechanically deflectable nanotube member;
• and
• a metal channel member coupled to the nanotube member so as to be aligned with the metal source region and the metal drain region,
• wherein electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the metal channel member in electrical connection with the metal source region and the metal drain region to form a current path.

A nanoelectromechanical transistor (NEMT) comprising:

• an insulative substrate including a gate adjacent thereto, a source region and a drain region separated from the gate by an insulator, the source region and the drain region positioned at one of:
• a) a distance from a central region over the gate, and b) adjacent to a pedestal area in a central region over the gate;
• an electromechanically deflectable nanotube member;
• and
• a channel member electrically insulatively coupled to the nanotube member so as to be aligned with the source region and the drain region,
• wherein electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the channel member in electrical connection with the source region and the drain region to form a current path.

An inverter comprising:

• a first nanoelectromechanical transistor (NEMT) and a second NEMT,
• each NEMT including:
• a substrate including a gate adjacent thereto, a source region and a drain region;
• an electromechanically deflectable nanotube member;
• and
• a channel member electrically insulatively coupled to the nanotube member so as to be aligned with the source region and the drain region,
• wherein electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the channel member in electrical connection with the source region and the drain region to form a current path, and
• wherein the source region and the nanotube member of the first NEMT are electrically connected to a power source, the drain region and the nanotube member of the second NEMT are electrically grounded, the drain region of the first NEMT and the source region of the second NEMT are electrically connected to an output potential, and the gates of the first NEMT and the second NEMT are electrically coupled to an input potential.