Silicon controlled rectifier device for electrostatic discharge protection
AssigneeUnited Microelectronics Corp.
InventorsHsin-Yen Hwang, Tien-Hao Tang
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Abstract
An SCR device includes a substrate, a plurality of isolation structures defining a first region and a second region in the substrate, an n well disposed in the substrate, an n type first doped region disposed in the first region in the substrate, a p type second doped region disposed in the second region in the substrate, and a p type third doped region (PESD implant region) disposed underneath the first doped region in the first region in the substrate. The well is disposed underneath the first region and the second region, and the third doped region isolates the first doped region from the well.
Claims19
A silicon controlled rectifier (SCR) device for electrostatic discharge (ESD) protection, comprising:
- a substrate;
- a plurality of isolation structures disposed in the substrate, the isolation structures defining a first region and a second region in the substrate;
- a well of a first conductive type disposed in the substrate, wherein the well is disposed underneath the first region and the second region;
- a first doped region of the first conductive type disposed in the first region in the substrate;
- a second doped region of a second conductive type disposed in the second region in the substrate;
- and
- a third doped region of the second conductive type disposed underneath the first doped region in the first region in the substrate, wherein the third doped region isolates the first doped region from the well.
A silicon controlled rectifier (SCR) electrostatic discharge (ESD) protection device, comprising:
- a substrate;
- a plurality of isolation structures disposed in the substrate;
- a gate structure disposed on the surface of the substrate, the gate structure and the isolation structures defining a first region and a second region in the substrate;
- a well of a first conductive type disposed in the substrate, wherein the well is disposed underneath the first region and the second region;
- a first doped region of the first conductive type disposed in the first region in the substrate;
- a second doped region of a second conductive type disposed in the second region in the substrate;
- a third doped region of the second conductive type disposed underneath the first doped region in the first region in the substrate;
- and
- a fourth doped region of the second conductive type disposed alongside the first doped region, wherein the third doped region and the fourth doped region isolate the first doped region from the well.
Dependencies are inferred from the claim text.