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US 2009/0014794 A1Published application
Mosfet with laterally graded channel region and method for manufacturing same
AssigneeInternational Business Machines Corporation
InventorsHuilong Zhu, Xiangdong Chen
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Abstract
The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel region is graded along a direction that is substantially parallel to a substrate surface in which the semiconductor device is located. Specifically, the semiconductor device comprises a field effect transistor (FET) that has a SiGe channel with a laterally graded germanium content.
Claims12
A semiconductor device, comprising:
- a semiconductor substrate having a substrate surface;
- a source region located in the substrate surface;
- a drain region located in the substrate surface and spaced apart from the source region;
- a channel region located in the substrate surface between the source and drain region;
- and
- a gate structure located over the channel region, said gate structure comprising a gate dielectric layer and a gate electrode,
- wherein the channel region comprises a semiconductor alloy comprising a first material and a second, different material, and wherein concentration of the second material in the channel region is graded along a direction that is substantially parallel to said substrate surface.
4 more elements
Dependencies are inferred from the claim text.