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US 2009/0014790 A1Published application
Semiconductor device and method of fabricating semiconductor device
AssigneesSanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
InventorsSeiji OTAKE, Yasuhiro TAKEDA, Kenichi MAKI
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Abstract
A semiconductor device includes a gate electrode formed through an insulating film in a groove having a first side surface adjacent to a source region and a base region, and a second conductive type first impurity region formed adjacent to a second side surface of the groove between the groove and a lead-out portion of a drain region existing below the base region so as to extend downward beyond a lower end of the groove.
Claims16
A semiconductor device comprising:
- a first conductive type first drain region;
- a first conductive type second drain region formed on said first drain region and having an impurity concentration lower than an impurity concentration of said first drain region;
- a lead-out portion of said first drain region formed so as to reach said first drain region through said second drain region;
- a second conductive type base region formed on said second drain region;
- a first conductive type source region formed on said base region;
- a gate electrode formed through an insulating film in a groove having a first side surface adjacent to said source region and said base region;
- and
- a second conductive type first impurity region formed adjacent to a second side surface of said groove between said groove and said lead-out portion so as to extend downward beyond a lower end of said groove.
5 more elements
A semiconductor device comprising:
- a first conductive type first drain region;
- a first conductive type second drain region formed on said first drain region and having an impurity concentration lower than an impurity concentration of said first drain region;
- a lead-out portion of said first drain region formed so as to reach said first drain region through said second drain region;
- a gate electrode formed in a groove formed on said second drain region;
- and
- a second conductive type impurity region for current path control formed adjacent to said lead-out portion downward beyond at least a lower end of said groove.
3 more elements
A method of fabricating a semiconductor device, comprising steps of:
- forming a first conductive type first drain region;
- forming a first conductive type second drain region having an impurity concentration lower than an impurity concentration of said first drain region on said first drain region;
- forming a lead-out portion of said first drain region so as to reach said first drain region through said second drain region;
- forming a groove on said second drain region;
- forming a gate electrode in said groove;
- and
- forming a second conductive type impurity region for current path control adjacent to said lead-out portion downward beyond at least a lower end of said groove by ion-implanting an impurity.
4 more elements
Dependencies are inferred from the claim text.