Nonvolatile semiconductor memory device and method for fabricating the same

A method for fabricating a nonvolatile semiconductor memory device comprising:

• a first step of selectively forming, in an upper portion of a semiconductor region, a plurality of bit line diffusion layers extending along a first direction;
• a second step of forming, on the semiconductor region, a plurality of gate structures extending along a second direction perpendicular to the first direction by successively forming a charge trapping film including an insulating film for trapping charge and a gate electrode on the charge trapping film;
• a third step of forming a first interlayer insulating film over the plurality of gate structures;
• a fourth step of selectively forming, in the first interlayer insulating film, a plurality of openings in which the bit line diffusion layers are respectively exposed and forming, respectively in the plurality of openings, a plurality of first contacts respectively electrically connected to the plurality of bit line diffusion layers;
• a fifth step of forming a UV blocking film for blocking UV over the first interlayer insulating film including the plurality of first contacts;
• a sixth step of forming a second interlayer insulating film on the UV blocking film;
• and
• a seventh step of selectively forming, in the second interlayer insulating film and the UV blocking film, a plurality of openings in which the plurality of first contacts are respectively exposed and forming, respectively in the plurality of openings, a plurality of second contacts respectively electrically connected to the plurality of first contacts.