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US 2009/0014755 A1Published application
Direct bond substrate of improved bonded interface heat resistance
OwnerTakashi Nakaoinventor
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Abstract
A direct bond substrate formed by bonding semiconductor substrates together, a semiconductor device using the direct bond substrate and a manufacturing method thereof are disclosed. A nitride film, oxynitride film, carbide film or an oxide film containing carbon is provided on the bonded interface of the semiconductor substrates in the direct bond substrate.
Claims20
A direct bond substrate comprising:
- a first semiconductor substrate,
- a film formed on the first semiconductor substrate, the film including one of a nitride film, oxynitride film, carbide film and an oxide film containing carbon, and
- a second semiconductor substrate bonded to the first semiconductor substrate with the film disposed therebetween.
A semiconductor device comprising:
- a first semiconductor substrate,
- a film which is formed on a first region on a main surface of the first semiconductor substrate, the film including one of a nitride film, oxynitride film, carbide film and an oxide film containing carbon,
- a first semiconductor layer formed on the film, the first semiconductor layer having a plane orientation different from that of the main surface of the first semiconductor substrate,
- a second semiconductor layer formed on the third region on the main surface of the first semiconductor substrate, the second semiconductor layer having a plane orientation which is the same as that of the main surface of the first semiconductor substrate,
- FETs of a first conductivity type formed in the first semiconductor layer, and
- FETs of a second conductivity type formed in the second semiconductor layer.
3 more elements
A manufacturing method of a semiconductor device comprising:
- subjecting a main surface of a first semiconductor substrate to one of a nitridation process and carbonization process, and
- bonding a second semiconductor substrate to the main surface of the first semiconductor substrate.
Dependencies are inferred from the claim text.