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US 2009/0014730 A1Published application
Silicon carbide transistors and methods for fabricating the same
AssigneeNational Taiwan University
InventorsJenn-Gwo Hwu, Kai-Chieh Chuang
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Abstract
An exemplary method for forming an insulator layer over a silicon carbide substrate includes providing a silicon carbide substrate and anodizing the silicon carbide substrate in a liquid ambient at a temperature of not more than 200° C. to form a silicon dioxide layer thereon. Also provided are silicon carbide transistors and methods for fabricating the same.
Claims24
A silicon carbide transistor, comprising:
- a silicon carbide substrate;
- a gate stack structure disposed over a part of the silicon carbide substrate, wherein the gate stack structure comprises a silicon dioxide layer and a conductive layer sequentially stacked over the silicon carbide substrate and the silicon dioxide layer is an anodized layer of the silicon carbide substrate;
- a pair of source/drain regions disposed in the silicon carbide substrate at opposite sides of the gate stack structure;
- and
- a pair of spacers disposed on a sidewall of the gate stack structure at opposite sides thereof, partially covering the silicon carbide substrate.
2 more elements
A method for fabricating a silicon carbide transistor, comprising:
- providing a silicon carbide substrate;
- performing an anodization process to the silicon carbide substrate, forming a silicon dioxide layer thereon;
- performing an annealing process to the silicon dioxide layer and the silicon carbide substrate;
- forming a conductive layer over the silicon dioxide layer;
- forming a resist pattern over a part of the conductive layer;
- performing an etching process using the resist pattern as an etching mask, removing the portion of the conductive layer and the silicon dioxide layer not covered by the resist pattern, forming a gate stack structure over the silicon carbide substrate;
- and
- removing the resist pattern and forming a pair of source/drain regions in the silicon carbide substrate at opposite sides of the gate stack structure and a pair of spacers on a sidewall of the gate stack structure at opposite sides thereof, wherein the spacers partially cover the silicon carbide substrate.
5 more elements
A method for forming an insulating layer over a silicon carbide substrate, comprising:
- providing a silicon carbide substrate;
- and
- anodizing the silicon carbide substrate in a liquid ambient at a temperature of not more than 200° C., forming a silicon dioxide layer thereon.
Dependencies are inferred from the claim text.